description the HT9435 uses adv anced technology to provide excellent rds ( on), low switching loss and reasonable price. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. features ? -30v/-5.1a, r ds (on) = 50m ? @ v gs = -10v ? -30v/-3.6a, r ds (on) = 95m ? @ v gs = -4.5v ? super high dense cell design for low r ds (on) ? rugged and reliable ? sop-8 package design applications ? power management in note ? portable equipment ? battery powered system ? dc/dc converter ? lcd display pin configuration absolute maximum ratings (ta=25 c unless otherwise noted) parameter symbol maximum unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v drain current continuous (1) i d -5.1 a pulse (2) i dm -20 drain-source diode forward current(1) i s -2.6 a maximum power dissipation (1) p d 2.5 w operating junction temperature range t j 150 storage temperature range t stg -55 to 150 HT9435 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
thermal resistance ratings thermal resistance symbol maximum unit junction-to-ambient r ja 50 /w note : 1. surface mounted on fr4 board , t 10sec 2. pulse test pulse width 300us , duty cycle 2% electrical characteristics (ta=25 unless otherwise noted) parameter symbol test conditions min typ max units off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = -250 a -30 - - v zero gate voltage drain current i dss v ds = -24v, v gs = 0 v - - -1 a gate-body leakage i gss v ds = 0v, v gs = 25v - - 100 na on characteristics (1) gate threshold voltage v gs (th) v gs = v ds , i d = -250 a -1.2 -1.8 -2.4 v drain-source on state resistance r ds (on) v gs = -10v, i d = -5.1a - 40 50 m ? v gs = -4.5v, i d = -3.6a - 67 95 drain-source diode characteristics (1) diode forward voltage v sd i s = -1.0a, v gs = 0v - - -1.0 v dynamic parameters (2) input cap. c iss v ds = -15v, v gs = 0v f = 1mhz - 910 - pf output cap. c oss - 170 - reverse transfer cap crss - 120 - switching parameters (2) total gate charge q g v ds = -15v, v gs = -10v, i d = -1a - 17.4 - nc v ds = -15v, v gs = -4.5v, i d = -1a 9.1 - gate-source charge q gs v ds = -15v, v gs = -10v, i d = -1a - 3.1 - gate-drain charge q gd - 3.5 - turn-on time t d(on) v ds = -15v, r l = 15 ? i d = -1a, v gen = -10v, r g =10 ? - 5.36 - ns tr - 7.76 - turn-off time t d(off) - 15.84 - tf - 9.84 - note : 1. pulse test pulse width 300us , duty cycle 2% 2. guaranteed by design, not subject to production testing HT9435 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characterictics HT9435 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characterictics HT9435 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package description sop8 package outl ine dimensions HT9435 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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